WebAmorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance 고은아: 2024.02.27: 3167: 95 Threshold voltage variation-immune FinFET design with metal-interlayer-semiconductor source/drain structure 고은아: 2024.02.27: 4693: 94 http://dclab.skku.edu/index.php?mid=board_UxEQ02&m=0&l=ko&oldact=dispmodulechangelang&liststyle=gallery&order_type=desc&sort_index=readed_count&act=dispboardtaglist&page=2
Subthreshold current model of FinFETs based on analytical …
WebFeb 23, 2024 · Abstract: In this letter, an n-type short-channel negative capacitance FinFET (NC-FinFET) with a hysteresis window of 0.48 V, an on-/off-current ratio of 10 7, and a … WebSep 12, 2024 · The subthreshold slope will always be higher than its ideal value of 60 mV/dec due to short-channel effects . For tri-gate FinFETs, \(\eta\) can be modeled by deriving the relation between the total charge in the device and the … city and european asset finance
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WebApr 8, 2024 · The results show that Si0.8Ge0.2/Si SL FinFET exhibited the lowest average subthreshold slope (SSavg) of 88 mV/dec, the highest maximum transconductance (Gm, max) of 375.2 μS/μm, and the highest ON–OFF current ratio (ION/IOFF), approximately 106 at VOV = 0.5 V due to the strained effect. Furthermore, with the super-lattice FinFETs as ... WebANALYSIS OF SUBTHRESHOLD FINFET CIRCUITS FOR ULTRA-LOW POWER DESIGN Xiaoxia Wu Feng Wang Yuan Xie CSE Department, The Pennylvania Sate University ... WebImpact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-k/Metal-Gate Work-Function Variation 1: 고은아: 2024.02.27: 111: 72 Impact of Trap Position on Random Telegraph Noise in a 70-Å Nanowire Field-Effect Transistor 고은아: 2024.02.27: 140: 71 dickson trout pond fishing